bias resistor transistor pnp silicon surface mount transistor with monolithic bias resistor network 1 lmun5141t1g case 419, style 3 sot?323 (sc?70) this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sc?70/sot?323 package which is designed for low power surface mount applications. simplifies circuit design reduces board space reduces component count the sc?70/sot?323 package can be soldered using wave or reflow. the modified gull?winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. maximum ratings (t a = 25c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation p d 202 (note 1) mw t a = 25c 310 (note 2) derate above 25c 1.6 (note 1) c/w 2.5 (note 2) thermal resistance ? r ja 618 (note 1) c/w junction-to-ambient 403 (note 2) thermal resistance ? r jl 280 (note 1) c/w junction-to-lead 332 (note 2) junction and storage t j , t stg ?55 to +150 c temperature range 1. fr?4 @ minimum pad 2. fr?4 @ 1.0 x 1.0 inch pad pin 1 base (input) pin 3 collector (output) pin 2 emitter (ground) r 1 r 2 leshan radio company, ltd. we declare that the material of product compliance with rohs requirements. 3 2 rev.o 1/4 s-lmun5141t1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. ordering information device marking shipping lmun5141t1g 3000/tape&reel s-lmun5141t1g 6u
lmun5141t1g, s-lmum5141t1g leshan radio company, ltd. rev.o 2/4 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current (v be = 6.0 v) i ebo ? ? 0.1 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 3) dc current gain (v ce = 10 v, i c = 5.0 ma) h fe 160 ? collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ? ) v ol ? ? 0.2 vdc 3. pulse test: pulse width < 300 s, duty cycle < 2.0% output voltage (on) resistor ratio r 1 /r 2 input resistor r 1 k ? (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ? ) output voltage (off) v oh ?? vdc 4.9 350 70 100 130 ?? ? figure 1. derating curve ambient temperature ( c) 125 100 75 50 25 0 ? 25 ? 50 0 50 100 150 200 250 300 p d , power dissipation (mw) 150
leshan radio company, ltd. rev.o 3/4 lmun5141t1g, s-lmum5141t1g figure 2. v ce(sat) vs. i c figure 3. dc current gain i c , collector current (ma) i c , collector current (ma) 40 30 20 50 10 0 0.01 0.1 10 100 10 1 1 100 1000 figure 4. output capacitance figure 5. output current vs. input voltage v r , reverse voltage (v) v in , input voltage (v) 50 40 30 20 10 0 0 1 2 3 5 6 7 24 20 28 16 12 8 4 0 0.1 1 10 100 figure 6. input voltage vs. output current i c , collector current (ma) 40 30 50 20 10 0 0.1 1 10 100 v ce(sat) , collector ? emitter voltage (v) h fe , dc current gain c ob , output capacitance (pf) i c , collector current (ma) v in , input voltage (v) i c /i b = 10 150 c ? 55 c 25 c v ce = 10 v 150 c ? 55 c 25 c f = 10 khz i e = 0 a t a = 25 c v o = 5 v 150 c ? 55 c 25 c v o = 0.2 v 150 c ? 55 c 25 c 0.001 1 10 4 0.01 typical electrical characteristics
sc?70 (sot?323) a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref leshan radio company, ltd. rev.o 4/4 lmun5111t1g series , s-lmum5111t1g series
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